STMicroelectronics, Inc. MOSFETs STS4DNF60L

Description
MOSFET Dual N-Ch 60V 4A STripFET SOIC8
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Description
MOSFET Dual N-Ch 60V 4A STripFET SOIC8
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Datasheet
Datasheet Summary
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The Dual N-Channel MOSFET, part number STS4DNF60L, is designed for switching applications with a maximum drain-source voltage of 60V and a continuous drain current rating of 4A. It features a low on-resistance of 0.045 ohms, which contributes to efficient performance in power management tasks. The device is housed in a standard SO-8 package, facilitating easy automated surface mount assembly. It is capable of handling pulsed currents up to 16A and has a total power dissipation of 2W at a case temperature of 25¬8C. The MOSFET operates within a temperature range of -55¬8C to 150¬8C, making it suitable for various environmental conditions. This component is RoHS compliant, ensuring it meets environmental regulations.

Datasheet Summary
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The Dual N-Channel MOSFET, part number STS4DNF60L, is designed for switching applications with a maximum drain-source voltage of 60V and a continuous drain current rating of 4A. It features a low on-resistance of 0.045 ohms, which contributes to efficient performance in power management tasks. The device is housed in a standard SO-8 package, facilitating easy automated surface mount assembly. It is capable of handling pulsed currents up to 16A and has a total power dissipation of 2W at a case temperature of 25¬8C. The MOSFET operates within a temperature range of -55¬8C to 150¬8C, making it suitable for various environmental conditions. This component is RoHS compliant, ensuring it meets environmental regulations.

Suppliers

Company
Product
Description
Supplier Links
Corby, Northants, United Kingdom
MOSFETs
4858358
MOSFETs 4858358
MOSFET Dual N-Ch 60V 4A STripFET SOIC8

MOSFET Dual N-Ch 60V 4A STripFET SOIC8

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
4858358P
MOSFETs 4858358P
MOSFET Dual N-Ch 60V 4A STripFET SOIC8

MOSFET Dual N-Ch 60V 4A STripFET SOIC8

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
9206557
MOSFETs 9206557
MOSFET Dual N-Ch 60V 4A STripFET SOIC8

MOSFET Dual N-Ch 60V 4A STripFET SOIC8

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF60L - 027849-STS4DNF60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF60L
027849-STS4DNF60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF60L 027849-STS4DNF60L
Manufacturer: STMicroelectronics Win Source Part Number: 027849-STS4DNF60L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: STS4DNF60 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1030pF @ 25V Maximum Rds On at Id,Vgs: 55 mOhm @ 2A, 10V Alternative Parts (Cross-Reference): SI4946BEY-T1-E3; SI4946BEY-T1-GE3; SP8K33TB; Introduction Date: December 07, 1998 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: STMicroelectronics
Win Source Part Number: 027849-STS4DNF60L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: STS4DNF60
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1030pF @ 25V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): SI4946BEY-T1-E3; SI4946BEY-T1-GE3; SP8K33TB;
Introduction Date: December 07, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
FET, MOSFET Arrays - 497-3226-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
497-3226-2-ND
FET, MOSFET Arrays 497-3226-2-ND
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - 497-3226-1-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
497-3226-1-ND
FET, MOSFET Arrays 497-3226-1-ND
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - 497-3226-6-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
497-3226-6-ND
FET, MOSFET Arrays 497-3226-6-ND
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC

Buy Now Datasheet
Transistor - 16485803 - Radwell International
Willingboro, NJ, United States
Transistor
16485803
Transistor 16485803
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.065OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.065OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
FET, MOSFET Arrays - STS4DNF60L - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
STS4DNF60L
FET, MOSFET Arrays STS4DNF60L
MOSFET 2N-CH 60V 4A 8-SOIC

MOSFET 2N-CH 60V 4A 8-SOIC

Supplier's Site Datasheet
Dual Mosfet, N-Ch, 60V, 4A, Soic; Transistor Polarity Stmicroelectronics - 26M3734 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N-Ch, 60V, 4A, Soic; Transistor Polarity Stmicroelectronics
26M3734
Dual Mosfet, N-Ch, 60V, 4A, Soic; Transistor Polarity Stmicroelectronics 26M3734
DUAL MOSFET, N-CH, 60V, 4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL MOSFET, N-CH, 60V, 4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet
Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Stmicroelectronics - 54M6333 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Stmicroelectronics
54M6333
Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Stmicroelectronics 54M6333
DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS4DNF60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS4DNF60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS4DNF60L
MOSFET 2N-CH 60V 4A 8SOIC

MOSFET 2N-CH 60V 4A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 60 Volt 4 Amp

MOSFET N-Ch 60 Volt 4 Amp

Buy Now Datasheet

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey Radwell International ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 4858358 4858358P 027849-STS4DNF60L 497-3226-2-ND 16485803 STS4DNF60L 26M3734 54M6333 STS4DNF60L STS4DNF60L
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF60L FET, MOSFET Arrays Transistor FET, MOSFET Arrays Dual Mosfet, N-Ch, 60V, 4A, Soic; Transistor Polarity Stmicroelectronics Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
V(BR)DSS 60 volts 60 volts 60 volts 60 volts
IDSS 4000 milliamps 4000 milliamps 4000 milliamps 4000 milliamps 4000 milliamps
rDS(on) 0.0550 ohms 0.0550 ohms 0.0450 ohms 0.0450 ohms
Package Type SOIC SOIC SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3 TO-3
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