The Dual N-Channel MOSFET, part number STS4DNF60L, is designed for switching applications with a maximum drain-source voltage of 60V and a continuous drain current rating of 4A. It features a low on-resistance of 0.045 ohms, which contributes to efficient performance in power management tasks. The device is housed in a standard SO-8 package, facilitating easy automated surface mount assembly. It is capable of handling pulsed currents up to 16A and has a total power dissipation of 2W at a case temperature of 25¬8C. The MOSFET operates within a temperature range of -55¬8C to 150¬8C, making it suitable for various environmental conditions. This component is RoHS compliant, ensuring it meets environmental regulations.
MOSFET 2N-CH 60V 4A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.065OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: STMicroelectronics
Win Source Part Number: 027849-STS4DNF60L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: STS4DNF60
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1030pF @ 25V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): SI4946BEY-T1-E3; SI4946BEY-T1-GE3; SP8K33TB;
Introduction Date: December 07, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET Dual N-Ch 60V 4A STripFET SOIC8
MOSFET Dual N-Ch 60V 4A STripFET SOIC8
MOSFET Dual N-Ch 60V 4A STripFET SOIC8
DUAL MOSFET, N-CH, 60V, 4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 60V 4A 8SOIC
| ODG (Origin Data Global) | DigiKey | Radwell International | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STS4DNF60L | 497-3226-2-ND | 16485803 | 027849-STS4DNF60L | 4858358 | 4858358P | STS4DNF60L | 26M3734 | 54M6333 | STS4DNF60L |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF60L | MOSFETs | MOSFETs | MOSFET | Dual Mosfet, N-Ch, 60V, 4A, Soic; Transistor Polarity Stmicroelectronics | Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||||
| IDSS | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | 4000 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
