The Dual N-Channel MOSFET, part number STS4DNF60L, is designed for switching applications with a maximum drain-source voltage of 60V and a continuous drain current rating of 4A. It features a low on-resistance of 0.045 ohms, which contributes to efficient performance in power management tasks. The device is housed in a standard SO-8 package, facilitating easy automated surface mount assembly. It is capable of handling pulsed currents up to 16A and has a total power dissipation of 2W at a case temperature of 25¬8C. The MOSFET operates within a temperature range of -55¬8C to 150¬8C, making it suitable for various environmental conditions. This component is RoHS compliant, ensuring it meets environmental regulations.
Manufacturer: STMicroelectronics
Win Source Part Number: 027849-STS4DNF60L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: STS4DNF60
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1030pF @ 25V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): SI4946BEY-T1-E3; SI4946BEY-T1-GE3; SP8K33TB;
Introduction Date: December 07, 1998
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface Mount 8-SOIC
60V 4A N-Ch MOSFET SOIC 55mR RdsOn Product overview: STS4DNF60L from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4A, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-STS4DNF60L can be used for catalog matching and distributor lookup.
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MOSFET Dual N-Ch 60V 4A STripFET SOIC8
MOSFET Dual N-Ch 60V 4A STripFET SOIC8
DUAL MOSFET, N-CH, 60V, 4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 60V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.065OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET 2N-CH 60V 4A 8SOIC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 027849-STS4DNF60L | 497-3226-2-ND | 289-STS4DNF60L | STS4DNF60L | 4858358 | 4858358P | 26M3734 | 54M6333 | STS4DNF60L | 16485803 | STS4DNF60L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4DNF60L | FET, MOSFET Arrays | 60V 4A SOIC MOSFET Transistor | FET, MOSFET Arrays | MOSFETs | MOSFETs | Dual Mosfet, N-Ch, 60V, 4A, Soic; Transistor Polarity Stmicroelectronics | Dual N Channel Mosfet, 60V, Soic, Full Reel; Transistor Polarity Stmicroelectronics | MOSFET | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||||||
| PD | 2000 milliwatts | 2000 milliwatts | |||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | Soic | SOIC | TO-3 | TO-3 |
