STMicroelectronics, Inc. FET, MOSFET Arrays STS4C3F60L

Description
Mosfet Array N and P-Channel 60V 4A, 3A 2W Surface Mount 8-SOIC
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Description
Mosfet Array N and P-Channel 60V 4A, 3A 2W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 497-4396-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
497-4396-2-ND
FET, MOSFET Arrays 497-4396-2-ND
Mosfet Array N and P-Channel 60V 4A, 3A 2W Surface Mount 8-SOIC

Mosfet Array N and P-Channel 60V 4A, 3A 2W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4C3F60L - 139725-STS4C3F60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4C3F60L
139725-STS4C3F60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4C3F60L 139725-STS4C3F60L
Manufacturer: STMicroelectronics Win Source Part Number: 139725-STS4C3F60L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4A, 3A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 20.4nC @ 4.5V Max Input Capacitance: 1030pF @ 25V Maximum Rds On at Id,Vgs: 55 mOhm @ 2A, 10V Alternative Parts (Cross-Reference): IRF7343TRPBF; AO4612; IRF7343TR; Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 139725-STS4C3F60L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4A, 3A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20.4nC @ 4.5V
Max Input Capacitance: 1030pF @ 25V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2A, 10V
Alternative Parts (Cross-Reference): IRF7343TRPBF; AO4612; IRF7343TR;
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS4C3F60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS4C3F60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS4C3F60L
MOSFET N/P-CH 60V 4A/3A 8SOIC

MOSFET N/P-CH 60V 4A/3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-4396-2-ND 139725-STS4C3F60L STS4C3F60L
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS4C3F60L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity P-Channel
V(BR)DSS 60 volts
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