STMicroelectronics, Inc. FET, MOSFET Arrays STS3DPF60L

Description
Mosfet Array 2 P-Channel (Dual) 60V 3A 2W Surface Mount 8-SOIC
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Description
Mosfet Array 2 P-Channel (Dual) 60V 3A 2W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - 497-4123-2-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
497-4123-2-ND
FET, MOSFET Arrays 497-4123-2-ND
Mosfet Array 2 P-Channel (Dual) 60V 3A 2W Surface Mount 8-SOIC

Mosfet Array 2 P-Channel (Dual) 60V 3A 2W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS3DPF60L - 1103884-STS3DPF60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS3DPF60L
1103884-STS3DPF60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS3DPF60L 1103884-STS3DPF60L
Manufacturer: STMicroelectronics Win Source Part Number: 1103884-STS3DPF60L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 15.7nC @ 4.5V Max Input Capacitance: 630pF @ 25V Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 10V Alternative Parts (Cross-Reference): IRF7342TRPBF; SH8J31GZETB; SH8J31 TB; Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103884-STS3DPF60L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 15.7nC @ 4.5V
Max Input Capacitance: 630pF @ 25V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): IRF7342TRPBF; SH8J31GZETB; SH8J31 TB;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS3DPF60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS3DPF60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS3DPF60L
MOSFET 2P-CH 60V 3A 8SOIC

MOSFET 2P-CH 60V 3A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-4123-2-ND 1103884-STS3DPF60L STS3DPF60L
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS3DPF60L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity P-Channel
V(BR)DSS 60 volts
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