STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS2DPFS20V STS2DPFS20V

Description
Manufacturer: STMicroelectronics Win Source Part Number: 111320-STS2DPFS20V Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 600mV @ 250μA Max Gate Charge: 4.7nC @ 4.5V Max Input Capacitance: 315pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 111320-STS2DPFS20V Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 600mV @ 250μA Max Gate Charge: 4.7nC @ 4.5V Max Input Capacitance: 315pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS2DPFS20V - 111320-STS2DPFS20V - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS2DPFS20V
111320-STS2DPFS20V
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS2DPFS20V 111320-STS2DPFS20V
Manufacturer: STMicroelectronics Win Source Part Number: 111320-STS2DPFS20V Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 2W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 600mV @ 250μA Max Gate Charge: 4.7nC @ 4.5V Max Input Capacitance: 315pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 111320-STS2DPFS20V
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 600mV @ 250μA
Max Gate Charge: 4.7nC @ 4.5V
Max Input Capacitance: 315pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 200 mOhm @ 1A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-3225-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-3225-2-ND
Single FETs, MOSFETs 497-3225-2-ND
P-Channel 20V 2.5A (Tc) 2W (Tc) Surface Mount 8-SOIC

P-Channel 20V 2.5A (Tc) 2W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS2DPFS20V - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS2DPFS20V
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS2DPFS20V
MOSFET P-CH 20V 2.5A 8SO

MOSFET P-CH 20V 2.5A 8SO

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 111320-STS2DPFS20V 497-3225-2-ND STS2DPFS20V
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS2DPFS20V Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 2000 milliwatts
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