STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS26N3LLH6 STS26N3LLH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1003598-STS26N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1003598-STS26N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS26N3LLH6 - 1003598-STS26N3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS26N3LLH6
1003598-STS26N3LLH6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS26N3LLH6 1003598-STS26N3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1003598-STS26N3LLH6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 40nC @ 4.5V Max Input Capacitance: 4040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.4 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1003598-STS26N3LLH6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 40nC @ 4.5V
Max Input Capacitance: 4040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-12348-2-ND - DigiKey
Thief River Falls, MN, United States
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Single FETs, MOSFETs 497-12348-2-ND
N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SOIC

N-Channel 30V 26A (Tc) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS26N3LLH6 - Shenzhen Shengyu Electronics Technology Limited
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS26N3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS26N3LLH6
MOSFET N-CH 30V 26A 8SO

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Supplier's Site
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant Stmicroelectronics - 01X0067 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant Stmicroelectronics
01X0067
Mosfet Transistor, N Channel, 26 A, 30 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant Stmicroelectronics 01X0067
MOSFET Transistor, N Channel, 26 A, 30 V, 0.0038 ohm, 10 V, 1 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 26 A, 30 V, 0.0038 ohm, 10 V, 1 V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG

MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1003598-STS26N3LLH6 497-12348-2-ND STS26N3LLH6 01X0067 STS26N3LLH6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS26N3LLH6 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 26 A, 30 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 2700 milliwatts
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