STMicroelectronics, Inc. Single FETs, MOSFETs STS11NF30L

Description
N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-SOIC
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Description
N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-4121-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4121-2-ND
Single FETs, MOSFETs 497-4121-2-ND
N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 11A (Tc) 2.5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - STS11NF30L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STS11NF30L
Single FETs, MOSFETs STS11NF30L
MOSFET N-CH 30V 11A 8SO

MOSFET N-CH 30V 11A 8SO

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS11NF30L - 031535-STS11NF30L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS11NF30L
031535-STS11NF30L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS11NF30L 031535-STS11NF30L
Manufacturer: STMicroelectronics Win Source Part Number: 031535-STS11NF30L Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1440pF @ 25V Maximum Gate-Source Voltage: ±18V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031535-STS11NF30L
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 5V
Max Input Capacitance: 1440pF @ 25V
Maximum Gate-Source Voltage: ±18V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS11NF30L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS11NF30L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS11NF30L
MOSFET N-CH 30V 11A 8SO

MOSFET N-CH 30V 11A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 30 Volt 11 Amp

MOSFET N-Ch 30 Volt 11 Amp

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-4121-2-ND STS11NF30L 031535-STS11NF30L STS11NF30L STS11NF30L
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS11NF30L Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
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