P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package Product overview: STS10P3LLH6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30 V, 0.01 Ohm, -12.5 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30 V, 0.01 Ohm, -12.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STS10P3LLH6 can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 10A 8SO
Manufacturer: STMicroelectronics
Win Source Part Number: 1261995-STS10P3LLH6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.7W
Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 30V 10A 8SO
MOSFET P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package
MOSFET, P-CH, 30V, 12.5A, 150DEG C, 2.7W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STS10P3LLH6 | STS10P3LLH6 | 1261995-STS10P3LLH6 | 497-15482-2-ND | STS10P3LLH6 | STS10P3LLH6 | 69AH2856 |
| Product Name | P-Channel -30 V 0.01 Ohm -12.5 A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - STS10P3LLH6 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| IDSS | 10000 milliamps |
