STMicroelectronics, Inc. Single FETs, MOSFETs STS10P3LLH6

Description
MOSFET P-CH 30V 10A 8SO
Request a Quote Datasheet
Description
MOSFET P-CH 30V 10A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STS10P3LLH6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STS10P3LLH6
Single FETs, MOSFETs STS10P3LLH6
MOSFET P-CH 30V 10A 8SO

MOSFET P-CH 30V 10A 8SO

Supplier's Site Datasheet
FETs - Single - STS10P3LLH6 - 1261995-STS10P3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STS10P3LLH6
1261995-STS10P3LLH6
FETs - Single - STS10P3LLH6 1261995-STS10P3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1261995-STS10P3LLH6 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.7W Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum) Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261995-STS10P3LLH6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.7W
Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V

Buy Now
Single FETs, MOSFETs - 497-15482-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15482-2-ND
Single FETs, MOSFETs 497-15482-2-ND
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - 497-15482-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15482-1-ND
Single FETs, MOSFETs 497-15482-1-ND
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - 497-15482-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15482-6-ND
Single FETs, MOSFETs 497-15482-6-ND
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics - 69AH2856 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics
69AH2856
Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics 69AH2856
MOSFET, P-CH, 30V, 12.5A, 150DEG C, 2.7W ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 12.5A, 150DEG C, 2.7W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package

MOSFET P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS10P3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS10P3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS10P3LLH6
MOSFET P-CH 30V 10A 8SO

MOSFET P-CH 30V 10A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STS10P3LLH6 1261995-STS10P3LLH6 497-15482-2-ND 69AH2856 STS10P3LLH6 STS10P3LLH6
Product Name Single FETs, MOSFETs FETs - Single - STS10P3LLH6 Single FETs, MOSFETs Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 10000 milliamps
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