STMicroelectronics, Inc. FETs - Single - STS10P3LLH6 STS10P3LLH6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261995-STS10P3LLH6 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.7W Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum) Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1261995-STS10P3LLH6 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.7W Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum) Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STS10P3LLH6 - 1261995-STS10P3LLH6 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STS10P3LLH6
1261995-STS10P3LLH6
FETs - Single - STS10P3LLH6 1261995-STS10P3LLH6
Manufacturer: STMicroelectronics Win Source Part Number: 1261995-STS10P3LLH6 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: 8-SOIC Power Dissipation (Maximum): 2.7W Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6; Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 10A Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum) Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1261995-STS10P3LLH6
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: 8-SOIC
Power Dissipation (Maximum): 2.7W
Alternative Parts (Cross-Reference): IRF9328TRPBF; uPA2737GR-E1-AT; uPA2737GR-E2-AT; STS10P3LLH6;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 10A
Rds On (Maximum) at Id, Vgs: 12mOhm at 5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs: 33nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3350pF at 25V

Buy Now
Single FETs, MOSFETs - 497-15482-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15482-2-ND
Single FETs, MOSFETs 497-15482-2-ND
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - 497-15482-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15482-1-ND
Single FETs, MOSFETs 497-15482-1-ND
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - 497-15482-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15482-6-ND
Single FETs, MOSFETs 497-15482-6-ND
P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

P-Channel 30V 10A (Ta) 2.7W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - STS10P3LLH6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STS10P3LLH6
Single FETs, MOSFETs STS10P3LLH6
MOSFET P-CH 30V 10A 8SO

MOSFET P-CH 30V 10A 8SO

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package

MOSFET P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STS10P3LLH6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STS10P3LLH6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STS10P3LLH6
MOSFET P-CH 30V 10A 8SO

MOSFET P-CH 30V 10A 8SO

Supplier's Site
Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics - 69AH2856 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics
69AH2856
Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics 69AH2856
MOSFET, P-CH, 30V, 12.5A, 150DEG C, 2.7W ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 12.5A, 150DEG C, 2.7W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1261995-STS10P3LLH6 497-15482-2-ND STS10P3LLH6 STS10P3LLH6 STS10P3LLH6 69AH2856
Product Name FETs - Single - STS10P3LLH6 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 30V, 12.5A, 150Deg C, 2.7W Rohs Compliant Stmicroelectronics
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 30 volts 30 volts
PD 2700 milliwatts 2700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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