MOSFET 2N-CH 30V 10A 8-SOIC
Manufacturer: STMicroelectronics
Win Source Part Number: 1103869-STS10DN3LH5
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.6nC @ 5V
Max Input Capacitance: 475pF @ 25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
MOSFET Dual N-CH 30 V 10 A SO-8 STri
MOSFET, DUAL N-CH, 30V, 10A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 30V 10A 8SOIC
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STS10DN3LH5 | 1103869-STS10DN3LH5 | 497-10011-2-ND | STS10DN3LH5 | 45AC7741 | STS10DN3LH5 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS10DN3LH5 | FET, MOSFET Arrays | MOSFET | Mosfet, Dual N-Ch, 30V, 10A, Soic; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||
| IDSS | 10000 milliamps | 10000 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
