Dual N-Ch MOSFET 30V 10A 21mR SO-8 Product overview: STS10DN3LH5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 10A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-STS10DN3LH5 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 30V 10A 2.5W Surface Mount 8-SOIC
MOSFET 2N-CH 30V 10A 8-SOIC
Manufacturer: STMicroelectronics
Win Source Part Number: 1103869-STS10DN3LH5
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.6nC @ 5V
Max Input Capacitance: 475pF @ 25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET Dual N-CH 30 V 10 A SO-8 STri
MOSFET 2N-CH 30V 10A 8SOIC
MOSFET, DUAL N-CH, 30V, 10A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-STS10DN3LH5 | 497-10011-2-ND | STS10DN3LH5 | 1103869-STS10DN3LH5 | STS10DN3LH5 | STS10DN3LH5 | 45AC7741 |
| Product Name | Dual 30V 10A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STS10DN3LH5 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 30V, 10A, Soic; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| PD | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
