STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STR1P2UH7 STR1P2UH7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103830-STR1P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.8nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): DMP2225L-7; RTR025P02; STR1P2UH7; TSM2301BCX; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103830-STR1P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.8nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): DMP2225L-7; RTR025P02; STR1P2UH7; TSM2301BCX; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STR1P2UH7 - 1103830-STR1P2UH7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STR1P2UH7
1103830-STR1P2UH7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STR1P2UH7 1103830-STR1P2UH7
Manufacturer: STMicroelectronics Win Source Part Number: 1103830-STR1P2UH7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 350mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.4A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 4.8nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 100 mOhm @ 700mA, 4.5V Alternative Parts (Cross-Reference): DMP2225L-7; RTR025P02; STR1P2UH7; TSM2301BCX; Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: STMicroelectronics
Win Source Part Number: 1103830-STR1P2UH7
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 350mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 4.8nC @ 4.5V
Max Input Capacitance: 510pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 700mA, 4.5V
Alternative Parts (Cross-Reference): DMP2225L-7; RTR025P02; STR1P2UH7; TSM2301BCX;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - 497-15519-2-ND - DigiKey
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Single FETs, MOSFETs 497-15519-2-ND
P-Channel 20V 1.4A (Ta) 350mW (Tc) Surface Mount SOT-23-3

P-Channel 20V 1.4A (Ta) 350mW (Tc) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STR1P2UH7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs STR1P2UH7
MOSFET P-CH 20V 1.4A SOT-23

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1103830-STR1P2UH7 497-15519-2-ND STR1P2UH7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STR1P2UH7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 350 milliwatts
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