MOSFET N-CH 600V 500MA TO92-3
N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
N-Channel 600V 500mA (Tc) 3W (Tc) Through Hole TO-92-3
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package Product overview: STQ2HNK60ZR-AP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Zener, 600 V, 4.4 Ohm, 2 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Zener, 600 V, 4.4 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STQ2HNK60ZR-AP can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1261951-STQ2HNK60ZR-
Series: SuperMESH
Packaging: Tape in Box
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Family Name: STQ2HNK60ZR-AP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-92-3
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 280pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 3W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.8 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): RJK6002DJE-00#Z0; AP4002T; KHB1D0N60G;
Introduction Date: March 09, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
MOSFET, N-CH, 600V, 0.5A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power RoHS Compliant: Yes
MOSFET, N-CH, 600V, 0.5A, TO-92; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 500MA TO92-3
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STQ2HNK60ZR-AP | 497-12344-3-ND | 278-STQ2HNK60ZR-AP | 1261951-STQ2HNK60ZR-AP | STQ2HNK60ZR-AP | 34AC1983 | STQ2HNK60ZR-AP |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel Zener 600 V 4.4 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ2HNK60ZR-AP | MOSFET | Mosfet, N-Ch, 600V, 0.5A, To-92; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 500 milliamps | 500 milliamps | |||||
| PD | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts |
