STMicroelectronics, Inc. Single FETs, MOSFETs STQ1NC45R-AP

Description
MOSFET N-CH 450V 500MA TO92-3
Request a Quote Datasheet
Description
MOSFET N-CH 450V 500MA TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STQ1NC45R-AP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STQ1NC45R-AP
Single FETs, MOSFETs STQ1NC45R-AP
MOSFET N-CH 450V 500MA TO92-3

MOSFET N-CH 450V 500MA TO92-3

Supplier's Site
Single FETs, MOSFETs - 497-19264-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19264-1-ND
Single FETs, MOSFETs 497-19264-1-ND
N-Channel 450V 500mA (Tc) 3.1W (Tc) Through Hole TO-92-3

N-Channel 450V 500mA (Tc) 3.1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Single FETs, MOSFETs - 497-19264-3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19264-3-ND
Single FETs, MOSFETs 497-19264-3-ND
N-Channel 450V 500mA (Tc) 3.1W (Tc) Through Hole TO-92-3

N-Channel 450V 500mA (Tc) 3.1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1NC45R-AP - 038709-STQ1NC45R-AP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1NC45R-AP
038709-STQ1NC45R-AP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1NC45R-AP 038709-STQ1NC45R-AP
Manufacturer: STMicroelectronics Win Source Part Number: 038709-STQ1NC45R-AP Packaging: AMMO PACKAGE Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Drain-Source Breakdown Voltage: 450V Continuous Drain Current at 25°C: 500mA (Tc) Gate-Source Threshold Voltage: 3.7V @ 250μA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 160pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 038709-STQ1NC45R-AP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current at 25°C: 500mA (Tc)
Gate-Source Threshold Voltage: 3.7V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 160pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET POWER MOSFET

MOSFET POWER MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STQ1NC45R-AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STQ1NC45R-AP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STQ1NC45R-AP
MOSFET N-CH 450V 500MA TO92-3

MOSFET N-CH 450V 500MA TO92-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STQ1NC45R-AP 497-19264-1-ND 038709-STQ1NC45R-AP STQ1NC45R-AP STQ1NC45R-AP
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1NC45R-AP MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 450 volts 450 volts
IDSS 500 milliamps
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