N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3
600V 1A N-Ch MOSFET, TO-92, 7.3 Ohm Rds(on) Product overview: STQ1HNK60R-AP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1A, 7.3 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1A, 7.3 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STQ1HNK60R-AP can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 038724-STQ1HNK60R-AP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Tc)
Family Name: STQ1HNK60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 400mA (Tc)
Gate-Source Threshold Voltage: 3.7V @ 250μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 156pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 8.5 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): MDZ1N60UMH; SW C 1N60A; HS54095TZ-E;
Introduction Date: June 09, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs
MOSFET N-CH 600V 400MA TO92-3
MOSFET N-CH 600V 400MA TO92-3
MOSFET, N CHANNEL, 600V, 0.4A, TO92; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:500mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15648-3-ND | 278-STQ1HNK60R-AP | 038724-STQ1HNK60R-AP | STQ1HNK60R-AP | 7146796 | 7146796P | STQ1HNK60R-AP | 33R1296 |
| Product Name | Single FETs, MOSFETs | 600V 1A 7.3 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STQ1HNK60R-AP | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 600V, 0.4A, To92; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; To-92 | TO-92; TO-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-3 | |
| PD | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| V(BR)DSS | 600 volts | 600 volts |
