STMicroelectronics, Inc. Single FETs, MOSFETs STP9NM60N

Description
N-Channel 600V 6.5A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 6.5A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-10966-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10966-5-ND
Single FETs, MOSFETs 497-10966-5-ND
N-Channel 600V 6.5A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 600V 6.5A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N - 212371-STP9NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N
212371-STP9NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N 212371-STP9NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 212371-STP9NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17.4nC @ 10V Max Input Capacitance: 452pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 745 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212371-STP9NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17.4nC @ 10V
Max Input Capacitance: 452pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 745 mOhm @ 3.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3497 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics
94T3497
Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics 94T3497
MOSFET Transistor, N Channel, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics - 21T4044 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics
21T4044
Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics 21T4044
MOSFET, N CH, 600V, 6.5A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.63ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 6.5A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.63ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP9NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP9NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP9NM60N
MOSFET N-CH 600V 6.5A TO220AB

MOSFET N-CH 600V 6.5A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR

MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-10966-5-ND 212371-STP9NM60N 94T3497 21T4044 STP9NM60N STP9NM60N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-3 TO-3; TO-220 TO-220; TO-220-3
V(BR)DSS 600 volts
PD 70000 milliwatts
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