STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N STP9NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212371-STP9NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17.4nC @ 10V Max Input Capacitance: 452pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 745 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N - 212371-STP9NM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10966-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP9NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3497 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics - 21T4044 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 212371-STP9NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17.4nC @ 10V Max Input Capacitance: 452pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 745 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N - 212371-STP9NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N
212371-STP9NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N 212371-STP9NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 212371-STP9NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 6.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 17.4nC @ 10V Max Input Capacitance: 452pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 745 mOhm @ 3.25A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212371-STP9NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 6.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17.4nC @ 10V
Max Input Capacitance: 452pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 745 mOhm @ 3.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-10966-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10966-5-ND
Single FETs, MOSFETs 497-10966-5-ND
N-Channel 600V 6.5A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 600V 6.5A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STP9NM60N
MOSFET STP9NM60N
MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR

MOSFET N-Ch 600V 0.63 Ohm 6.5A MDmesh II PWR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP9NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP9NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP9NM60N
MOSFET N-CH 600V 6.5A TO220AB

MOSFET N-CH 600V 6.5A TO220AB

Supplier's Site
Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics - 94T3497 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics
94T3497
Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics 94T3497
MOSFET Transistor, N Channel, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics - 21T4044 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics
21T4044
Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics 21T4044
MOSFET, N CH, 600V, 6.5A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.63ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 6.5A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.63ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212371-STP9NM60N 497-10966-5-ND STP9NM60N STP9NM60N 94T3497 21T4044
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP9NM60N Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 6.5 A, 600 V, 0.63 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics Mosfet, N Ch, 600V, 6.5A, To-220; Transistor Polarity Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 70000 milliwatts
TJ 150 C (302 F)
Unlock Full Specs
to access all available technical data