STMicroelectronics, Inc. Single FETs, MOSFETs STP8NM60ND

Description
N-Channel 600V 7A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 7A (Tc) 70W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-8793-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8793-5-ND
Single FETs, MOSFETs 497-8793-5-ND
N-Channel 600V 7A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 600V 7A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM60ND - 1103721-STP8NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM60ND
1103721-STP8NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM60ND 1103721-STP8NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 1103721-STP8NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 560pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 700 mOhm @ 3.5A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 1103721-STP8NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 560pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 700 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Singapore
N-Channel 7A 600V 0.7ohm MOSFET Transistor
278-STP8NM60ND
N-Channel 7A 600V 0.7ohm MOSFET Transistor 278-STP8NM60ND
7A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Product overview: STP8NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 600V, 0.7ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 600V, 0.7ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP8NM60ND can be used for catalog matching and distributor lookup.

7A, 600V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Product overview: STP8NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 600V, 0.7ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 600V, 0.7ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP8NM60ND can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP8NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP8NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP8NM60ND
MOSFET N-CH 600V 7A TO220-3

MOSFET N-CH 600V 7A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-8793-5-ND 1103721-STP8NM60ND 278-STP8NM60ND STP8NM60ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP8NM60ND N-Channel 7A 600V 0.7ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 600 volts
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