STMicroelectronics, Inc. Single FETs, MOSFETs STP85NF55L

Description
MOSFET N-CH 55V 80A TO220AB
Request a Quote Datasheet
Description
MOSFET N-CH 55V 80A TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP85NF55L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP85NF55L
Single FETs, MOSFETs STP85NF55L
MOSFET N-CH 55V 80A TO220AB

MOSFET N-CH 55V 80A TO220AB

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP85NF55L - 1103717-STP85NF55L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP85NF55L
1103717-STP85NF55L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP85NF55L 1103717-STP85NF55L
Manufacturer: STMicroelectronics Win Source Part Number: 1103717-STP85NF55L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 110nC @ 5V Max Input Capacitance: 4050pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): IRFB3306GPBF; CSD18532KCS; RX1L16BGNC10; Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management, Automotive

Manufacturer: STMicroelectronics
Win Source Part Number: 1103717-STP85NF55L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 110nC @ 5V
Max Input Capacitance: 4050pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IRFB3306GPBF; CSD18532KCS; RX1L16BGNC10;
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Automotive

Buy Now Datasheet
Single FETs, MOSFETs - 497-7532-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7532-5-ND
Single FETs, MOSFETs 497-7532-5-ND
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220

N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP85NF55L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP85NF55L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP85NF55L
MOSFET N-CH 55V 80A TO220AB

MOSFET N-CH 55V 80A TO220AB

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number STP85NF55L 1103717-STP85NF55L 497-7532-5-ND STP85NF55L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP85NF55L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 55 volts 55 volts
IDSS 80000 milliamps
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