MOSFET N-CH 55V 80A TO220AB
Manufacturer: STMicroelectronics
Win Source Part Number: 1103717-STP85NF55L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 110nC @ 5V
Max Input Capacitance: 4050pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): IRFB3306GPBF; CSD18532KCS; RX1L16BGNC10;
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management, Automotive
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220
MOSFET N-CH 55V 80A TO220AB
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | STP85NF55L | 1103717-STP85NF55L | 497-7532-5-ND | STP85NF55L |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP85NF55L | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 55 volts | 55 volts | ||
| IDSS | 80000 milliamps |