STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF70 STP80NF70

Description
Manufacturer: STMicroelectronics Win Source Part Number: 093076-STP80NF70 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Family Name: STP80NF70 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 68V Continuous Drain Current at 25°C: 98A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.8 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SUP75N08-10-E3; IRF2807; KF80N08P; BUK7513-75B; Introduction Date: June 11, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 093076-STP80NF70 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Family Name: STP80NF70 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 68V Continuous Drain Current at 25°C: 98A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.8 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SUP75N08-10-E3; IRF2807; KF80N08P; BUK7513-75B; Introduction Date: June 11, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF70 - 093076-STP80NF70 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF70
093076-STP80NF70
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF70 093076-STP80NF70
Manufacturer: STMicroelectronics Win Source Part Number: 093076-STP80NF70 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Family Name: STP80NF70 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 68V Continuous Drain Current at 25°C: 98A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 2550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.8 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): SUP75N08-10-E3; IRF2807; KF80N08P; BUK7513-75B; Introduction Date: June 11, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 093076-STP80NF70
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STP80NF70
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 68V
Continuous Drain Current at 25°C: 98A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SUP75N08-10-E3; IRF2807; KF80N08P; BUK7513-75B;
Introduction Date: June 11, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STP80NF70 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP80NF70
Single FETs, MOSFETs STP80NF70
MOSFET N-CH 68V 98A TO220AB

MOSFET N-CH 68V 98A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10964-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10964-5-ND
Single FETs, MOSFETs 497-10964-5-ND
N-Channel 68V 98A (Tc) 190W (Tc) Through Hole TO-220

N-Channel 68V 98A (Tc) 190W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II

MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP80NF70 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP80NF70
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP80NF70
MOSFET N-CH 68V 98A TO220AB

MOSFET N-CH 68V 98A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 093076-STP80NF70 STP80NF70 497-10964-5-ND STP80NF70 STP80NF70
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF70 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 68 volts 68 volts
PD 190000 milliwatts 190000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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