Manufacturer: STMicroelectronics
Win Source Part Number: 093076-STP80NF70
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Family Name: STP80NF70
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 68V
Continuous Drain Current at 25°C: 98A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.8 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SUP75N08-10-E3; IRF2807; KF80N08P; BUK7513-75B;
Introduction Date: June 11, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 68V 98A TO220AB
N-Channel 68V 98A (Tc) 190W (Tc) Through Hole TO-220
MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II
MOSFET N-CH 68V 98A TO220AB
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 093076-STP80NF70 | STP80NF70 | 497-10964-5-ND | STP80NF70 | STP80NF70 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF70 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 68 volts | 68 volts | |||
| PD | 190000 milliwatts | 190000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |