MOSFET N-CH 55V 80A TO220AB
Manufacturer: STMicroelectronics
Win Source Part Number: 026358-STP80NF55-06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STP80NF55-06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 189nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): SUP75N05-06; AP98T06GP-HF; SPP80N06S207NK; SUP75N05-06-E3;
Introduction Date: July 21, 1999
ECCN: EAR99
Country of Origin: China, Morocco
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial
N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-220
MOSFET N-Ch 55V 80A STripFET II TO220
MOSFET N-Ch 55V 80A STripFET II TO220
MOSFET N-Ch 55V 80A UltraFET II TO220
MOSFET N-CH 55V 80A TO220AB
MOSFET, N CHANNEL, 55V, 80A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:80A; On Resistance Rds(on):0.0065ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 80 A, 55 V, 6.5 mohm, 10 V, 3 V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP80NF55-06 | 026358-STP80NF55-06 | 497-2774-5-ND | 6875305 | 6875305P | STP80NF55-06 | STP80NF55-06 | 89K1634 | 34X2879 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80NF55-06 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 55V, 80A, To-220; Transistor Polarity Stmicroelectronics | Mosfet Transistor, N Channel, 80 A, 55 V, 6.5 Mohm, 10 V, 3 V Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 55 volts | 55 volts | |||||||
| IDSS | 80000 milliamps | 80000 milliamps | |||||||
| PD | 300000 milliwatts | 300000 milliwatts |
