MOSFET N-CH 60V 110A TO220
N-Channel 60V 110A (Tc) 120W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1103714-STP80N6F6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 7480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): PSMN3R9-60PSQ; STP190N55LF3; STP150NF55; STP80N6F6;
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 110A TO220
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP80N6F6 | 497-13976-5-ND | 1103714-STP80N6F6 | STP80N6F6 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N6F6 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 60 volts | 60 volts | ||
| IDSS | 110000 milliamps | |||
| PD | 120000 milliwatts | 120000 milliwatts |
