Manufacturer: STMicroelectronics
Win Source Part Number: 1103714-STP80N6F6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 7480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): PSMN3R9-60PSQ; STP190N55LF3; STP150NF55; STP80N6F6;
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 110A (Tc) 120W (Tc) Through Hole TO-220
N-Channel 60V 5.8mR Power MOSFET TO-220 Product overview: STP80N6F6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP80N6F6 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 110A TO220
MOSFET N-CH 60V 110A TO220
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1103714-STP80N6F6 | 497-13976-5-ND | 278-STP80N6F6 | STP80N6F6 | STP80N6F6 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N6F6 | Single FETs, MOSFETs | N-Channel 60V TO-220 MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |
| V(BR)DSS | 60 volts | 60 volts | |||
| PD | 120000 milliwatts | 150000 milliwatts | 120000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | Through Hole |