STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N10F7 STP80N10F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103713-STP80N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 3100pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103713-STP80N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 3100pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N10F7 - 1103713-STP80N10F7 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N10F7
1103713-STP80N10F7
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N10F7 1103713-STP80N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 1103713-STP80N10F7 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 3100pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103713-STP80N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 3100pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-14834-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14834-5-ND
Single FETs, MOSFETs 497-14834-5-ND
N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220

N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP80N10F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP80N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP80N10F7
MOSFET N-CH 100V 80A TO220

MOSFET N-CH 100V 80A TO220

Supplier's Site
Mosfet, N-Ch, 100V, 80A, To-220; Channel Type Stmicroelectronics - 45AC7734 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 80A, To-220; Channel Type Stmicroelectronics
45AC7734
Mosfet, N-Ch, 100V, 80A, To-220; Channel Type Stmicroelectronics 45AC7734
MOSFET, N-CH, 100V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

MOSFET, N-CH, 100V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 100V 0.0085Ohm typ 80A STripFET VII

MOSFET N-Ch 100V 0.0085Ohm typ 80A STripFET VII

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1103713-STP80N10F7 497-14834-5-ND STP80N10F7 45AC7734 STP80N10F7
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP80N10F7 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 80A, To-220; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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