STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP7NB60 STP7NB60

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103712-STP7NB60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1625pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1103712-STP7NB60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1625pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP7NB60 - 1103712-STP7NB60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP7NB60
1103712-STP7NB60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP7NB60 1103712-STP7NB60
Manufacturer: STMicroelectronics Win Source Part Number: 1103712-STP7NB60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.2A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1625pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1103712-STP7NB60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1625pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-2761-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2761-5-ND
Single FETs, MOSFETs 497-2761-5-ND
N-Channel 600V 7.2A (Tc) 125W (Tc) Through Hole TO-220

N-Channel 600V 7.2A (Tc) 125W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP7NB60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP7NB60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP7NB60
MOSFET N-CH 600V 7.2A TO220AB

MOSFET N-CH 600V 7.2A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1103712-STP7NB60 497-2761-5-ND STP7NB60
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP7NB60 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 125000 milliwatts
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