STMicroelectronics, Inc. Single FETs, MOSFETs STP70NF03L

Description
N-Channel 30V 70A (Tc) 100W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 30V 70A (Tc) 100W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STP70NF03L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STP70NF03L-ND
Single FETs, MOSFETs STP70NF03L-ND
N-Channel 30V 70A (Tc) 100W (Tc) Through Hole TO-220

N-Channel 30V 70A (Tc) 100W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP70NF03L - 1103705-STP70NF03L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP70NF03L
1103705-STP70NF03L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP70NF03L 1103705-STP70NF03L
Manufacturer: STMicroelectronics Win Source Part Number: 1103705-STP70NF03L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 30nC @ 5V Max Input Capacitance: 1440pF @ 25V Maximum Gate-Source Voltage: ±18V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Application Field: Used in RF Communications, Power Management, Consumer Electronics, Industrial

Manufacturer: STMicroelectronics
Win Source Part Number: 1103705-STP70NF03L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 30nC @ 5V
Max Input Capacitance: 1440pF @ 25V
Maximum Gate-Source Voltage: ±18V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Application Field: Used in RF Communications, Power Management, Consumer Electronics, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP70NF03L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP70NF03L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP70NF03L
MOSFET N-CH 30V 70A TO220AB

MOSFET N-CH 30V 70A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 30 Volt 70 Amp

MOSFET N-Ch 30 Volt 70 Amp

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STP70NF03L-ND 1103705-STP70NF03L STP70NF03L STP70NF03L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP70NF03L Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 30 volts
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