MOSFET N-CH 900V 5.8A TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 038681-STP6NK90ZFP
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 60.5nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2.9A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 900V 5.8A SuperMESH TO220FP
MOSFET N-Ch 900V 5.8A SuperMESH TO220FP
N-Channel 900V 5.8A (Tc) 30W (Tc) Through Hole TO-220FP
MOSFET N-Ch, 900V-1.56ohms Zener SuperMESH 5.8A
HV MOSFET PLANAR
MOSFET N-CH 900V 5.8A TO220FP
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP6NK90ZFP | 038681-STP6NK90ZFP | 6875336P | 1031575 | 497-12617-5-ND | STP6NK90ZFP | 57P2011 | STP6NK90ZFP |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP6NK90ZFP | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Hv Mosfet Planar Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 900 volts | 900 volts | ||||||
| IDSS | 5800 milliamps | |||||||
| PD | 30000 milliwatts | 30000 milliwatts |