STMicroelectronics, Inc. Transistor STP6NC80Z/FP

Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5.4A I(D), 800V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220FP. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5.4A I(D), 800V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220FP. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 211035597 - Radwell International
Willingboro, NJ, United States
Transistor
211035597
Transistor 211035597
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5.4A I(D), 800V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220FP. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5.4A I(D), 800V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220FP. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 211035597
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
Power Gain 25 dB
View Details