600V N-CH MOSFET, 4.5A, 1.2R Rds(on), TO-220 Product overview: STP6N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.5A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP6N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261776-STP6N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 232pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 60W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
Alternative Parts (Cross-Reference): PJP7N60; PJP8N60; SiHFBC40-E3;
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET, N-CHANNEL, 600V, 60W, 4.5A. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 600V, 4.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 4.5A TO220
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STP6N60M2 | 497-13974-5-ND | 1261776-STP6N60M2 | 54742780 | 45AC7729 | STP6N60M2 | STP6N60M2 |
| Product Name | 600V 4.5A TO-220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP6N60M2 | Transistor | Mosfet, N-Ch, 600V, 4.5A, To-220Ab; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | |||||
| PD | 60000 milliwatts | ||||||
| TJ | -55 C (-67 F) |
