STMicroelectronics, Inc. Single FETs, MOSFETs STP6N60M2

Description
N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13974-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13974-5-ND
Single FETs, MOSFETs 497-13974-5-ND
N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole TO-220

N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole TO-220

Buy Now Datasheet
Transistor - 54742780 - Radwell International
Willingboro, NJ, United States
Transistor
54742780
Transistor 54742780
MOSFET, N-CHANNEL, 600V, 60W, 4.5A. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CHANNEL, 600V, 60W, 4.5A. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP6N60M2 - 1261776-STP6N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP6N60M2
1261776-STP6N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP6N60M2 1261776-STP6N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1261776-STP6N60M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 232pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 60W (Tc) Rds On (Maximum) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V Alternative Parts (Cross-Reference): PJP7N60; PJP8N60; SiHFBC40-E3; Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1261776-STP6N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 232pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 60W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
Alternative Parts (Cross-Reference): PJP7N60; PJP8N60; SiHFBC40-E3;
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP6N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP6N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP6N60M2
MOSFET N-CH 600V 4.5A TO220

MOSFET N-CH 600V 4.5A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

Buy Now Datasheet
Mosfet, N-Ch, 600V, 4.5A, To-220Ab; Channel Type Stmicroelectronics - 45AC7729 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 4.5A, To-220Ab; Channel Type Stmicroelectronics
45AC7729
Mosfet, N-Ch, 600V, 4.5A, To-220Ab; Channel Type Stmicroelectronics 45AC7729
MOSFET, N-CH, 600V, 4.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 4.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Radwell International Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13974-5-ND 54742780 1261776-STP6N60M2 STP6N60M2 STP6N60M2 45AC7729
Product Name Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP6N60M2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 4.5A, To-220Ab; Channel Type Stmicroelectronics
Polarity N-Channel
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