Manufacturer: STMicroelectronics
Win Source Part Number: 212363-STP5NB60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 884pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): IXTP5N60P; STP5NK60Z; STP4N62K3; STP5NB60;
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
TRANSISTOR. FREE 2 YEAR RADWELL WARRANTY
N-Channel 600V 5A (Tc) 100W (Tc) Through Hole TO-220
MOSFET N-CH 600V 5A TO220AB
| Win Source Electronics | Radwell International | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | RF Transistors |
| Product Number | 212363-STP5NB60 | 32485608 | 497-2769-5-ND | STP5NB60 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5NB60 | Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 100000 milliwatts |
