STMicroelectronics, Inc. Single FETs, MOSFETs STP5NB40

Description
N-Channel 400V 4.7A (Tc) 80W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 400V 4.7A (Tc) 80W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-2675-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2675-5-ND
Single FETs, MOSFETs 497-2675-5-ND
N-Channel 400V 4.7A (Tc) 80W (Tc) Through Hole TO-220

N-Channel 400V 4.7A (Tc) 80W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5NB40 - 212362-STP5NB40 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5NB40
212362-STP5NB40
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5NB40 212362-STP5NB40
Manufacturer: STMicroelectronics Win Source Part Number: 212362-STP5NB40 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 4.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 405pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2.3A, 10V Alternative Parts (Cross-Reference): FQP5N40; STP5NK40Z; PHP4N40E; Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212362-STP5NB40
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 4.7A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 405pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2.3A, 10V
Alternative Parts (Cross-Reference): FQP5N40; STP5NK40Z; PHP4N40E;
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP5NB40 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP5NB40
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP5NB40
MOSFET N-CH 400V 4.7A TO220AB

MOSFET N-CH 400V 4.7A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-2675-5-ND 212362-STP5NB40 STP5NB40
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5NB40 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 400 volts
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