STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5N80 STP5N80

Description
Manufacturer: STMicroelectronics Win Source Part Number: 194612-STP5N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 177pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.75 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 194612-STP5N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 177pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.75 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5N80 - 194612-STP5N80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5N80
194612-STP5N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5N80 194612-STP5N80
Manufacturer: STMicroelectronics Win Source Part Number: 194612-STP5N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 5nC @ 10V Max Input Capacitance: 177pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.75 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 194612-STP5N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 5nC @ 10V
Max Input Capacitance: 177pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.75 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 194612-STP5N80
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP5N80
Polarity N-Channel; N-Channel
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