The STMicroelectronics N-channel MOSFET, part number STP50N60DM6, is designed for high-voltage applications with a maximum drain-source voltage of 600V and a continuous drain current rating of 36A at a case temperature of 25¬8C. It features a low on-resistance of 70 mOc to 80 mOc, which enhances efficiency in power conversion applications. The device is housed in a TO-220 package and is RoHS compliant. This MOSFET is suitable for various switching applications, benefiting from a fast-recovery body diode and low gate charge characteristics. It has been avalanche tested and exhibits high dv/dt ruggedness, making it reliable for demanding environments. The operating junction temperature range is from -55¬8C to 150¬8C, and it supports a total power dissipation of up to 250W at 25¬8C. The device also features low input capacitance, which aids in reducing switching losses. Engineers looking for a robust and efficient MOSFET for high-voltage applications may find this product suitable for their needs.
MOSFET N-CH 600V 36A TO220
N-Channel 600V 36A (Tc) 250W (Tc) Through Hole TO-220
MOSFET, N-CH, 600V, 36A, TO-220 ROHS COMPLIANT: YES
MOSFET N-CH 600V 36A TO220
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP50N60DM6 | 497-STP50N60DM6-ND | 89AH1363 | STP50N60DM6 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 36A, To-220 Rohs Compliant Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 600 volts | |||
| IDSS | 36000 milliamps |
