MOSFET N-CH 600V 4A TO220AB
N-Channel 600V 4A (Tc) 70W (Tc) Through Hole TO-220
600V 4A N-CH MOSFET TO-220 Product overview: STP4NK60Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP4NK60Z can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 006282-STP4NK60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes
MOSFET, N, TO-220; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:600V; CONTINUOUS DRAIN CURRENT ID:4A; ON RESISTANCE RDS(ON):2OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3.75V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-Ch 600 Volt 4 Amp Zener SuperMESH
MOSFET N-CH 600V 4A TO220AB
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP4NK60Z | 497-3191-5-ND | 278-STP4NK60Z | 006282-STP4NK60Z | 4857686 | 26M3692 | 38985269 | STP4NK60Z | STP4NK60Z |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 600V 4A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4NK60Z | MOSFETs | Mosfet, N, To-220; Channel Type Stmicroelectronics | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| IDSS | 4000 milliamps | 4000 milliamps | |||||||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts |
