Manufacturer: STMicroelectronics
Win Source Part Number: 1103692-STP4NB80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 920pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): IRFBE30PBF; MTP4N80E; STP4NB80; TSM3N80CZ C0G;
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial
N-Channel 800V 4A (Tc) 100W (Tc) Through Hole TO-220
MOSFET N-CH 800V 4A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1103692-STP4NB80 | 497-2781-5-ND | STP4NB80 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4NB80 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 800 volts | ||
| PD | 100000 milliwatts |
