STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4N90 STP4N90

Description
Manufacturer: STMicroelectronics Win Source Part Number: 194586-STP4N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 60W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 5.3nC @ 10V Max Input Capacitance: 173pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 194586-STP4N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 60W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 5.3nC @ 10V Max Input Capacitance: 173pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4N90 - 194586-STP4N90 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4N90
194586-STP4N90
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4N90 194586-STP4N90
Manufacturer: STMicroelectronics Win Source Part Number: 194586-STP4N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Current Sensing Polarity: N-Channel Power Dissipation (Max): 60W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 5.3nC @ 10V Max Input Capacitance: 173pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 194586-STP4N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Current Sensing
Polarity: N-Channel
Power Dissipation (Max): 60W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 5.3nC @ 10V
Max Input Capacitance: 173pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 194586-STP4N90
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP4N90
Polarity N-Channel; N-Channel
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