STMicroelectronics, Inc. Single FETs, MOSFETs STP45NE06

Description
N-Channel 60V 45A (Tc) 100W (Tc) Through Hole TO-220
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Description
N-Channel 60V 45A (Tc) 100W (Tc) Through Hole TO-220
Request a Quote Datasheet

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Single FETs, MOSFETs - 497-2762-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2762-5-ND
Single FETs, MOSFETs 497-2762-5-ND
N-Channel 60V 45A (Tc) 100W (Tc) Through Hole TO-220

N-Channel 60V 45A (Tc) 100W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP45NE06 - 054435-STP45NE06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP45NE06
054435-STP45NE06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP45NE06 054435-STP45NE06
Manufacturer: STMicroelectronics Win Source Part Number: 054435-STP45NE06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 100W (Tc) Family Name: STP45NE06 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 45A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 28 mOhm @ 22.5A, 10V Alternative Parts (Cross-Reference): NTP45N06G; SFP50N06; RFP50N06_NL; MTP52N06VL; Introduction Date: June 17, 1998 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 054435-STP45NE06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 100W (Tc)
Family Name: STP45NE06
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 28 mOhm @ 22.5A, 10V
Alternative Parts (Cross-Reference): NTP45N06G; SFP50N06; RFP50N06_NL; MTP52N06VL;
Introduction Date: June 17, 1998
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP45NE06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP45NE06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP45NE06
MOSFET N-CH 60V 45A TO220

MOSFET N-CH 60V 45A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-2762-5-ND 054435-STP45NE06 STP45NE06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP45NE06 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
V(BR)DSS 60 volts
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