The STMicroelectronics N-channel MOSFET, part number 45AC7725, features a maximum drain-source voltage of 100V and a continuous drain current rating of 45A. It is housed in a TO-220 package, suitable for through-hole mounting. The device exhibits a low on-state resistance (RDS(on)) of 0.0145 ,Ѷ, which contributes to its efficiency in switching applications. The MOSFET is designed with STripFET,Ñ¢ F7 technology, enhancing its performance by reducing internal capacitance and gate charge, thus enabling faster switching speeds. It also offers high avalanche ruggedness and a low Crss/Ciss ratio, which aids in electromagnetic interference (EMI) immunity. The operating junction temperature range is from -55¬8C to 175¬8C, making it versatile for various applications.
Manufacturer: STMicroelectronics
Win Source Part Number: 1103688-STP45N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Family Name: STP45N10F7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 1640pF @ 50V
Maximum Gate-Source Voltage: 20V
Maximum Rds On at Id,Vgs: 18 mOhm @ 22.5A, 10V
Alternative Parts (Cross-Reference): BUK9529-100B; TK40D10J1(Q); TK40D10J1(STA4,Q);
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
N-Ch MOSFET 100V 45A 18mR TO-220 Power Transistor Product overview: STP45N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 45A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 45A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP45N10F7 can be used for catalog matching and distributor lookup.
N-Channel 100V 45A (Tc) 60W (Tc) Through Hole TO-220
MOSFET, N-CH, 100V, 45A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:45A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V RoHS Compliant: Yes
MOSFET N-CH 100V 45A TO220
MOSFET, N-CH, 100V, 45A, TO-220; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:45A; ON RESISTANCE RDS(ON):0.0145OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-channel 100 V 0 013 Ohm typ 45 A
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1103688-STP45N10F7 | 278-STP45N10F7 | 497-14573-5-ND | 45AC7725 | STP45N10F7 | 110295195 | STP45N10F7 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP45N10F7 | 100V 45A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 45A, To-220; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 100 volts | ||||||
| PD | 60000 milliwatts | 60000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
