Manufacturer: STMicroelectronics
Win Source Part Number: 037747-STP40NF20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 160W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRFB31N20DPBF; STP30NF20; STP20NF20;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET N-CH 200V 40A TO220AB
N-Channel 200V 40A (Tc) 160W (Tc) Through Hole TO-220
MOSFET N-CH 200V 40A TO220AB
MOSFET, N CHANNEL, 200V, 40A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 037747-STP40NF20 | STP40NF20 | 497-5806-5-ND | STP40NF20 | 33R1280 | STP40NF20 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP40NF20 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 200V, 40A, To-220; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 200 volts | 200 volts | ||||
| PD | 160000 milliwatts | 160000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
