STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK80Z STP3NK80Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 092163-STP3NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 092163-STP3NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK80Z - 092163-STP3NK80Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK80Z
092163-STP3NK80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK80Z 092163-STP3NK80Z
Manufacturer: STMicroelectronics Win Source Part Number: 092163-STP3NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 092163-STP3NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STP3NK80Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP3NK80Z
Single FETs, MOSFETs STP3NK80Z
MOSFET N-CH 800V 2.5A TO220AB

MOSFET N-CH 800V 2.5A TO220AB

Supplier's Site Datasheet
MOSFETs - 6875370 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6875370
MOSFETs 6875370
MOSFET N-Ch 800V 2.5A SuperMESH TO220

MOSFET N-Ch 800V 2.5A SuperMESH TO220

Supplier's Site
MOSFETs - 1686704 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1686704
MOSFETs 1686704
MOSFET N-Ch 800V 2.5A SuperMESH TO220

MOSFET N-Ch 800V 2.5A SuperMESH TO220

Supplier's Site
Transistor - 26199236 - Radwell International
Willingboro, NJ, United States
Transistor
26199236
Transistor 26199236
MOSFET, TRANSISTOR POLARITY: N CHANNEL, DRAIN SOURCE VOLTAGE VDS:800V, CONTINUOUS DRAIN CURRENT ID:2.5A, ON RESISTANCE RDS(ON):4.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, POWER DISSIPATION PD:70W, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, TRANSISTOR POLARITY: N CHANNEL, DRAIN SOURCE VOLTAGE VDS:800V, CONTINUOUS DRAIN CURRENT ID:2.5A, ON RESISTANCE RDS(ON):4.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, POWER DISSIPATION PD:70W, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - 497-4379-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4379-5-ND
Single FETs, MOSFETs 497-4379-5-ND
N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-220

N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH

MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH

Buy Now Datasheet
Mosfet, N, To-220; Channel Type Stmicroelectronics - 38K7925 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-220; Channel Type Stmicroelectronics
38K7925
Mosfet, N, To-220; Channel Type Stmicroelectronics 38K7925
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes

MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP3NK80Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP3NK80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP3NK80Z
N-channel 800 V, 3.8 Ohm typ., 2

N-channel 800 V, 3.8 Ohm typ., 2

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) RS Components, Ltd. Radwell International DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 092163-STP3NK80Z STP3NK80Z 6875370 26199236 497-4379-5-ND STP3NK80Z 38K7925 STP3NK80Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK80Z Single FETs, MOSFETs MOSFETs Transistor Single FETs, MOSFETs MOSFET Mosfet, N, To-220; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 70000 milliwatts 70000 milliwatts 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; To-220 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
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