MOSFET N-CH 800V 2.5A TO220AB
Manufacturer: STMicroelectronics
Win Source Part Number: 092163-STP3NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFET, TRANSISTOR POLARITY: N CHANNEL, DRAIN SOURCE VOLTAGE VDS:800V, CONTINUOUS DRAIN CURRENT ID:2.5A, ON RESISTANCE RDS(ON):4.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, POWER DISSIPATION PD:70W, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-220
MOSFET N-Ch 800V 2.5A SuperMESH TO220
MOSFET N-Ch 800V 2.5A SuperMESH TO220
MOSFET N-Ch 800 Volt 2.5A Zener SuperMESH
N-channel 800 V, 3.8 Ohm typ., 2
MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | Radwell International | DigiKey | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP3NK80Z | 092163-STP3NK80Z | 26199236 | 497-4379-5-ND | 6875370 | STP3NK80Z | STP3NK80Z | 38K7925 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK80Z | Transistor | Single FETs, MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, To-220; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 800 volts | 800 volts | ||||||
| IDSS | 2500 milliamps | 2500 milliamps | ||||||
| PD | 70000 milliwatts | 70000 milliwatts | 70000 milliwatts |
