STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK60Z STP3NK60Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031466-STP3NK60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 11.8nC @ 10V Max Input Capacitance: 311pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031466-STP3NK60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 11.8nC @ 10V Max Input Capacitance: 311pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK60Z - 031466-STP3NK60Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK60Z
031466-STP3NK60Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK60Z 031466-STP3NK60Z
Manufacturer: STMicroelectronics Win Source Part Number: 031466-STP3NK60Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 11.8nC @ 10V Max Input Capacitance: 311pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031466-STP3NK60Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 11.8nC @ 10V
Max Input Capacitance: 311pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-7525-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7525-5-ND
Single FETs, MOSFETs 497-7525-5-ND
N-Channel 600V 2.4A (Tc) 45W (Tc) Through Hole TO-220

N-Channel 600V 2.4A (Tc) 45W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP3NK60Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP3NK60Z
Single FETs, MOSFETs STP3NK60Z
MOSFET N-CH 600V 2.4A TO220AB

MOSFET N-CH 600V 2.4A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP3NK60Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP3NK60Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP3NK60Z
MOSFET N-CH 600V 2.4A TO220AB

MOSFET N-CH 600V 2.4A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH

MOSFET N-Ch 600 Volt 2.4 A Zener SuperMESH

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 031466-STP3NK60Z 497-7525-5-ND STP3NK60Z STP3NK60Z STP3NK60Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP3NK60Z Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 45000 milliwatts 45000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data