MOSFET N-CH 650V 30A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 1103684-STP38N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 3000pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 95 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
650V N-CH MOSFET, 30A, 95mR Rds(on), TO-220 Product overview: STP38N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 30A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 30A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP38N65M5 can be used for catalog matching and distributor lookup.
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-220
MOSFET, N-CH, 650V, 30A, TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.073ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 650V 30A TO220
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STP38N65M5 | 1103684-STP38N65M5 | 278-STP38N65M5 | 497-13112-5-ND | 45AC7721 | 43W6561 | STP38N65M5 | STP38N65M5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP38N65M5 | 650V 30A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 30A, To-220Ab; Transistor Polarity Stmicroelectronics | Hv Mosfet Mdmesh Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 650 volts | 650 volts | ||||||
| IDSS | 30000 milliamps | 30000 milliamps | ||||||
| PD | 190000 milliwatts | 190000 milliwatts | 190000 milliwatts |
