STMicroelectronics, Inc. Single FETs, MOSFETs STP38N65M5

Description
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13112-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13112-5-ND
Single FETs, MOSFETs 497-13112-5-ND
N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-220

N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP38N65M5 - 1103684-STP38N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP38N65M5
1103684-STP38N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP38N65M5 1103684-STP38N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 1103684-STP38N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 71nC @ 10V Max Input Capacitance: 3000pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 95 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1103684-STP38N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 71nC @ 10V
Max Input Capacitance: 3000pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 95 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STP38N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP38N65M5
Single FETs, MOSFETs STP38N65M5
MOSFET N-CH 650V 30A TO220

MOSFET N-CH 650V 30A TO220

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP38N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP38N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP38N65M5
MOSFET N-CH 650V 30A TO220

MOSFET N-CH 650V 30A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5

Buy Now Datasheet
Mosfet, N-Ch, 650V, 30A, To-220Ab; Transistor Polarity Stmicroelectronics - 45AC7721 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 30A, To-220Ab; Transistor Polarity Stmicroelectronics
45AC7721
Mosfet, N-Ch, 650V, 30A, To-220Ab; Transistor Polarity Stmicroelectronics 45AC7721
MOSFET, N-CH, 650V, 30A, TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.073ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 30A, TO-220AB; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.073ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Supplier's Site
Hv Mosfet Mdmesh Stmicroelectronics - 43W6561 - Newark, An Avnet Company
Chicago, IL, United States
Hv Mosfet Mdmesh Stmicroelectronics
43W6561
Hv Mosfet Mdmesh Stmicroelectronics 43W6561
HV MOSFET MDMESH

HV MOSFET MDMESH

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13112-5-ND 1103684-STP38N65M5 STP38N65M5 STP38N65M5 STP38N65M5 45AC7721 43W6561
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP38N65M5 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 30A, To-220Ab; Transistor Polarity Stmicroelectronics Hv Mosfet Mdmesh Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-3
V(BR)DSS 650 volts 650 volts
PD 190000 milliwatts 190000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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