Win Source Part Number: 993106-STP36N60M6
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M6
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -1138-STP36N60M6,497
Base Product Number: STP36
Drive Voltage (Max Rds On, Min Rds On): 10V
N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package Product overview: STP36N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 85 mOhm, 30 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 85 mOhm, 30 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP36N60M6 can be used for catalog matching and distributor lookup.
MOSFET N-CHANNEL 600V 30A TO220
N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220
MOSFET N-CHANNEL 600V 30A TO220
MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
MOSFET, N-CH, 600V, 30A, 150DEG C, 208W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 993106-STP36N60M6 | 278-STP36N60M6 | STP36N60M6 | 497-17552-ND | STP36N60M6 | STP36N60M6 | 94AC2367 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 600 V 85 mOhm 30 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 30A, 150Deg C, 208W; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 208000 milliwatts | 208000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
