STMicroelectronics, Inc. Single FETs, MOSFETs STP36N60M6

Description
N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-17552-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-17552-ND
Single FETs, MOSFETs 497-17552-ND
N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220

N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 993106-STP36N60M6 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
993106-STP36N60M6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 993106-STP36N60M6
Win Source Part Number: 993106-STP36N60M6 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M6 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 208W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -1138-STP36N60M6,497 -17552,2266-STP36N60 M6 Base Product Number: STP36 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 993106-STP36N60M6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M6
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 208W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -1138-STP36N60M6,497-17552,2266-STP36N60M6
Base Product Number: STP36
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STP36N60M6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP36N60M6
Single FETs, MOSFETs STP36N60M6
MOSFET N-CHANNEL 600V 30A TO220

MOSFET N-CHANNEL 600V 30A TO220

Supplier's Site
Singapore
N-Channel 600 V 85 mOhm 30 A MOSFET Transistor
278-STP36N60M6
N-Channel 600 V 85 mOhm 30 A MOSFET Transistor 278-STP36N60M6
N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package Product overview: STP36N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 85 mOhm, 30 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 85 mOhm, 30 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP36N60M6 can be used for catalog matching and distributor lookup.

N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package Product overview: STP36N60M6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 85 mOhm, 30 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 85 mOhm, 30 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP36N60M6 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 600V, 30A, 150Deg C, 208W; Transistor Polarity Stmicroelectronics - 94AC2367 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 30A, 150Deg C, 208W; Transistor Polarity Stmicroelectronics
94AC2367
Mosfet, N-Ch, 600V, 30A, 150Deg C, 208W; Transistor Polarity Stmicroelectronics 94AC2367
MOSFET, N-CH, 600V, 30A, 150DEG C, 208W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 30A, 150DEG C, 208W; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP36N60M6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP36N60M6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP36N60M6
MOSFET N-CHANNEL 600V 30A TO220

MOSFET N-CHANNEL 600V 30A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package

MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-17552-ND 993106-STP36N60M6 STP36N60M6 278-STP36N60M6 94AC2367 STP36N60M6 STP36N60M6
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs N-Channel 600 V 85 mOhm 30 A MOSFET Transistor Mosfet, N-Ch, 600V, 30A, 150Deg C, 208W; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-3 TO-220; TO-220-3
PD 208000 milliwatts 208000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Transistor Technology / Material MOSFET (Metal Oxide)
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SC2344E - 906347-2SC2344E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
25W, 30-1200 MHz, GaN RF Input-Matched Transistor - QPD1004A - Qorvo
Specs
Transistor Technology / Material 25W, 30-1200 MHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details