STMicroelectronics, Inc. Single FETs, MOSFETs STP360N4F6

Description
N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220
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Description
N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 497-13972-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13972-5-ND
Single FETs, MOSFETs 497-13972-5-ND
N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220

N-Channel 40V 120A (Tc) 300W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278165-STP360N4F6 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278165-STP360N4F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278165-STP360N4F6
Win Source Part Number: 1278165-STP360N4F6 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17930 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: -1138-STP360N4F6,497 -13972-5,STP360N4F6, 2266-STP360N4F6 Base Product Number: STP360 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278165-STP360N4F6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17930 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: -1138-STP360N4F6,497-13972-5,STP360N4F6,2266-STP360N4F6
Base Product Number: STP360
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP360N4F6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP360N4F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP360N4F6
MOSFET N-CH 40V 120A TO220

MOSFET N-CH 40V 120A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 497-13972-5-ND 1278165-STP360N4F6 STP360N4F6
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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