MOSFET N-CH 600V 24A TO220
Manufacturer: STMicroelectronics
Win Source Part Number: 1261722-STP33N60DM2
Series: MDmesh DM2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: STP33N60DM2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1870pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): AOT25S65; SiHP21N65EF-GE3; TK14E65W;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package Product overview: STP33N60DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.110 Ohm, 24 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.110 Ohm, 24 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP33N60DM2 can be used for catalog matching and distributor lookup.
N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-220
MOSFET, N-CH, 600V, 24A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
MOSFET N-CH 600V 24A TO220
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP33N60DM2 | 1261722-STP33N60DM2 | 278-STP33N60DM2 | 497-16352-5-ND | 79Y9468 | STP33N60DM2 | STP33N60DM2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP33N60DM2 | N-Channel 600 V 0.110 Ohm 24 A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 24A, To-220; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 24000 milliamps | 24000 milliamps | |||||
| PD | 190000 milliwatts |
