Manufacturer: STMicroelectronics
Win Source Part Number: 042940-STP32N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 72nC @ 10V
Max Input Capacitance: 3320pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 119 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): IPP60R099C6; AOT42S60; TSM60NB099CZ C0G;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
N-Channel 650V 24A (Tc) 150W (Tc) Through Hole TO-220
MOSFET N-CH 650V 24A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 042940-STP32N65M5 | 497-10079-5-ND | STP32N65M5 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP32N65M5 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | ||
| PD | 150000 milliwatts |
