STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP31N65M5 STP31N65M5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 053929-STP31N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 816pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 148 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): FCP104N60F; STP30N65M5; STP33N60M2; Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 053929-STP31N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 816pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 148 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): FCP104N60F; STP30N65M5; STP33N60M2; Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP31N65M5 - 053929-STP31N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP31N65M5
053929-STP31N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP31N65M5 053929-STP31N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 053929-STP31N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 816pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 148 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): FCP104N60F; STP30N65M5; STP33N60M2; Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 053929-STP31N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 816pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 148 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): FCP104N60F; STP30N65M5; STP33N60M2;
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-STP31N65M5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STP31N65M5-ND
Single FETs, MOSFETs 497-STP31N65M5-ND
N-Channel 650V 22A (Tc) 150W (Tc) Through Hole TO-220

N-Channel 650V 22A (Tc) 150W (Tc) Through Hole TO-220

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V

MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP31N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP31N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP31N65M5
MOSFET N-CH 650V 22A TO220

MOSFET N-CH 650V 22A TO220

Supplier's Site
Mosfet, N-Ch, 650V, 22A, 150Deg C, 150W Rohs Compliant Stmicroelectronics - 69AH2851 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 22A, 150Deg C, 150W Rohs Compliant Stmicroelectronics
69AH2851
Mosfet, N-Ch, 650V, 22A, 150Deg C, 150W Rohs Compliant Stmicroelectronics 69AH2851
MOSFET, N-CH, 650V, 22A, 150DEG C, 150W ROHS COMPLIANT: YES

MOSFET, N-CH, 650V, 22A, 150DEG C, 150W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 053929-STP31N65M5 497-STP31N65M5-ND STP31N65M5 STP31N65M5 69AH2851
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP31N65M5 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 650V, 22A, 150Deg C, 150W Rohs Compliant Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 150000 milliwatts
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