MOSFET N CH 100V 180A TO-220
N-Ch MOSFET 100V 180A 2.7mR TO-220 Power Transistor Product overview: STP310N10F7 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STP310N10F7 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1103678-STP310N10F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Family Name: STP310N10F7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 12800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 60A, 10V
Alternative Parts (Cross-Reference): TK2R9E10PL,S1X; IPP030N10N3 GXK; IPP030N10N3 G; AOT290L;
Introduction Date: August 20, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
N-Channel 100V 180A (Tc) 315W (Tc) Through Hole TO-220
MOSFET, N-CH, 100V, 180A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-Ch 100V 2.7 mOhm 180A STripFET VII
MOSFET N CH 100V 180A TO-220
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP310N10F7 | 278-STP310N10F7 | 1103678-STP310N10F7 | 497-13233-5-ND | 98Y2498 | STP310N10F7 | STP310N10F7 |
| Product Name | Single FETs, MOSFETs | 100V 180A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP310N10F7 | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 180A, To-220-3; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 180000 milliamps | 180000 milliamps | |||||
| PD | 315000 milliwatts | 315000 milliwatts | 315000 milliwatts |
