STMicroelectronics, Inc. FETs - Single - STP30N10F7 STP30N10F7

Description
Manufacturer: STMicroelectronics Win Source Part Number: 804645-STP30N10F7 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 24mOhm at 16A, 10V Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1270pF at 50V Current - Continuous Drain (Id) at 25°C: 32A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STP30N Maximum Vgs: ±20V
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 804645-STP30N10F7 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 24mOhm at 16A, 10V Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1270pF at 50V Current - Continuous Drain (Id) at 25°C: 32A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STP30N Maximum Vgs: ±20V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STP30N10F7 - 804645-STP30N10F7 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STP30N10F7
804645-STP30N10F7
FETs - Single - STP30N10F7 804645-STP30N10F7
Manufacturer: STMicroelectronics Win Source Part Number: 804645-STP30N10F7 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100V Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 50W (Tc) Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 24mOhm at 16A, 10V Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 1270pF at 50V Current - Continuous Drain (Id) at 25°C: 32A (Tc) Vgs(th) (Maximum) at Id: 4.5V at 250μA Part Number Series: STP30N Maximum Vgs: ±20V

Manufacturer: STMicroelectronics
Win Source Part Number: 804645-STP30N10F7
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 50W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 24mOhm at 16A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1270pF at 50V
Current - Continuous Drain (Id) at 25°C: 32A (Tc)
Vgs(th) (Maximum) at Id: 4.5V at 250μA
Part Number Series: STP30N
Maximum Vgs: ±20V

Buy Now
Sheung Wan, Hong Kong
MOSFET N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package

MOSFET N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP30N10F7 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP30N10F7
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP30N10F7
MOSFET N-CH 100V 32A TO220AB

MOSFET N-CH 100V 32A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 804645-STP30N10F7 STP30N10F7 STP30N10F7
Product Name FETs - Single - STP30N10F7 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data