STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80K5 STP2N80K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 137800-STP2N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 3nC @ 10V Max Input Capacitance: 95pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 137800-STP2N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 3nC @ 10V Max Input Capacitance: 95pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80K5 - 137800-STP2N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80K5
137800-STP2N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80K5 137800-STP2N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 137800-STP2N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 3nC @ 10V Max Input Capacitance: 95pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 137800-STP2N80K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 3nC @ 10V
Max Input Capacitance: 95pF @ 100V
Maximum Gate-Source Voltage: 30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-14279-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14279-5-ND
Single FETs, MOSFETs 497-14279-5-ND
N-Channel 800V 2A (Tc) 45W (Tc) Through Hole TO-220

N-Channel 800V 2A (Tc) 45W (Tc) Through Hole TO-220

Buy Now Datasheet
Mosfet, N-Ch, 800V, 2A, To-220Ab; Channel Type Stmicroelectronics - 45AC7705 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 2A, To-220Ab; Channel Type Stmicroelectronics
45AC7705
Mosfet, N-Ch, 800V, 2A, To-220Ab; Channel Type Stmicroelectronics 45AC7705
MOSFET, N-CH, 800V, 2A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 2A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP2N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP2N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP2N80K5
MOSFET N-CH 800V 2A TO220

MOSFET N-CH 800V 2A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected

MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 137800-STP2N80K5 497-14279-5-ND 45AC7705 STP2N80K5 STP2N80K5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80K5 Single FETs, MOSFETs Mosfet, N-Ch, 800V, 2A, To-220Ab; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 45000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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