STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80 STP2N80

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054263-STP2N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 3nC @ 10V Max Input Capacitance: 95pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80 - 054263-STP2N80 - Win Source Electronics
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 054263-STP2N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 3nC @ 10V Max Input Capacitance: 95pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80 - 054263-STP2N80 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80
054263-STP2N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80 054263-STP2N80
Manufacturer: STMicroelectronics Win Source Part Number: 054263-STP2N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 3nC @ 10V Max Input Capacitance: 95pF @ 100V Maximum Gate-Source Voltage: 30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054263-STP2N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 3nC @ 10V
Max Input Capacitance: 95pF @ 100V
Maximum Gate-Source Voltage: 30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 054263-STP2N80
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP2N80
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts
PD 45000 milliwatts
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