N-Channel 600V 23A (Tc) 190W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 113545-STP28NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 62.5nC @ 10V
Max Input Capacitance: 2090pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 150 mOhm @ 11.5A, 10V
Alternative Parts (Cross-Reference): IPP60R165CP; STP34NM60ND; STP20NM60FD;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MOSFET N-CH 600V 23A TO220
MOSFET N-channel 600 V 0 120 Ohm typ 24 A
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-14196-5-ND | 113545-STP28NM60ND | STP28NM60ND | STP28NM60ND |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP28NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 | |
| V(BR)DSS | 600 volts |
