STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP28N60DM2 STP28N60DM2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 935554-STP28N60DM2 Series: MDmesh™ DM2 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 21A (Tc) 170W (Tc) Through Hole TO-220 Package: TO-220-3 Package: Tube Mounting: Through Hole Family Name: STP28 Categories: Discrete Semiconductor Products Case / Package: TO-220 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 50 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 37 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 935554-STP28N60DM2 Series: MDmesh™ DM2 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 21A (Tc) 170W (Tc) Through Hole TO-220 Package: TO-220-3 Package: Tube Mounting: Through Hole Family Name: STP28 Categories: Discrete Semiconductor Products Case / Package: TO-220 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 50 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 37 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP28N60DM2 - 935554-STP28N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP28N60DM2
935554-STP28N60DM2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP28N60DM2 935554-STP28N60DM2
Manufacturer: STMicroelectronics Win Source Part Number: 935554-STP28N60DM2 Series: MDmesh™ DM2 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 21A (Tc) 170W (Tc) Through Hole TO-220 Package: TO-220-3 Package: Tube Mounting: Through Hole Family Name: STP28 Categories: Discrete Semiconductor Products Case / Package: TO-220 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 50 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 37 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: STMicroelectronics
Win Source Part Number: 935554-STP28N60DM2
Series: MDmesh™ DM2
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 21A (Tc) 170W (Tc) Through Hole TO-220
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: STP28
Categories: Discrete Semiconductor Products
Case / Package: TO-220
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Buy Now Datasheet
Single FETs, MOSFETs - 497-16348-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16348-5-ND
Single FETs, MOSFETs 497-16348-5-ND
N-Channel 600V 21A (Tc) 170W (Tc) Through Hole TO-220

N-Channel 600V 21A (Tc) 170W (Tc) Through Hole TO-220

Buy Now Datasheet
Single FETs, MOSFETs - STP28N60DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STP28N60DM2
Single FETs, MOSFETs STP28N60DM2
MOSFET N-CH 600V 21A TO220

MOSFET N-CH 600V 21A TO220

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package

MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-220 package

Buy Now Datasheet
Mosfet, N-Ch, 600V, 21A, To-220; Transistor Polarity Stmicroelectronics - 79Y9467 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 21A, To-220; Transistor Polarity Stmicroelectronics
79Y9467
Mosfet, N-Ch, 600V, 21A, To-220; Transistor Polarity Stmicroelectronics 79Y9467
MOSFET, N-CH, 600V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 21A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STP28N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STP28N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STP28N60DM2
MOSFET N-CH 600V 21A TO220

MOSFET N-CH 600V 21A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 935554-STP28N60DM2 497-16348-5-ND STP28N60DM2 STP28N60DM2 79Y9467 STP28N60DM2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP28N60DM2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 21A, To-220; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3; TO-220 TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-220; TO-220-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS207 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 15000 MHz
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF2804L - 110039-AUIRF2804L - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 300000 milliwatts
View Details
5 suppliers
15W, 30-1215 MHz, GaN RF Input-Matched Transistor - QPD1000A - Qorvo
Specs
Transistor Technology / Material 15W, 30-1215 MHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details