MOSFET N CH 80V 180A TO220
N-Channel 80V 180A (Tc) 315W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 1103672-STP270N8F7
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 315W (Tc)
Family Name: STP270N8F7
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 193nC @ 10V
Max Input Capacitance: 13600pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 mOhm @ 90A, 10V
Alternative Parts (Cross-Reference): IPP04CNE8NGXK; BUK654R0-75C,127; BUK754R3-75C,127;
Introduction Date: December 03, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N-Ch 80 V 2.1 mOhm 180 A STripFET VI DG
MOSFET N CH 80V 180A TO220
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STP270N8F7 | 497-13654-5-ND | 1103672-STP270N8F7 | STP270N8F7 | STP270N8F7 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STP270N8F7 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 80 volts | 80 volts | |||
| IDSS | 180000 milliamps |
