N-Channel 600V 21A (Tc) 190W (Tc) Through Hole TO-220
Manufacturer: STMicroelectronics
Win Source Part Number: 811030-STP26NM60ND
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 190W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: Not Applicable
Rds On (Maximum) at Id, Vgs: 175mOhm at 10.5A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 54.6nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1817pF at 100V
Current - Continuous Drain (Id) at 25°C: 21A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Part Number Series: STP26N
Maximum Vgs: ±25V
MOSFET N-CH 600V 21A TO220
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-14219-5-ND | 811030-STP26NM60ND | STP26NM60ND |
| Product Name | Single FETs, MOSFETs | FETs - Single - STP26NM60ND | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
